AMMC - 6420 6 - 18 GHz Power Amplifier
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AMMC-6420-W10 (pdf) |
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AMMC - 6420 6 - 18 GHz Power Amplifier Data Sheet Chip Size 2000 x 2000 µm x mils Chip Size Tolerance ± 10 µm mils Chip Thickness 100 ± 10 µm 4 ± mils Pad Dimensions 100 x 100 µm 4 ± mils AMMC-6420 MMIC is a broadband 1W power amplifier designed for use in frequency bands between 6 to 18GHz. It is a cost-effective alternative in commercial communications systems to a discrete FET hybrid. The MMIC has a partial input and output match to but can be easily externally matched by single element for narrow band frequency coverage The MMIC is unconditionally stable over all frequencies and bias conditions. Gate voltage is set using the Vg pin to optimize for linear or saturated power amplification. A temperature compensated RF output power detector circuit allows differential output power detection of 0.3V/W at 18 GHz. For improved reliability and moisture protection, the die is passivated at the active areas. • Wide frequency range 6 - 18 GHz • High gain 20 dB • Power GHz, P-2dB=30.5 dBm • Highly linear OIP3=38dBm • Integrated RF power detector • Volt, Volt, 800mA operation • Microwave Radio systems • Satellite VSAT and DBS systems • LMDS & Pt-Pt mmW Long Haul • & WiMax BWA • WLL and MMDS loops • Can be driven by AMMC-5618 6-20 GHz MMIC increasing luding overall gain. AMMC-6420 Absolute Maximum Ratings[1] Parameters/Conditions Units Min. Positive Drain Voltage Gate Supply Voltage Drain Current CW Input Power Operating Channel Temp. Tstg Storage Case Temp. Tmax Maximum Assembly Temp 60 sec max Note Operation in excess of any one of these conditions may result in permanent damage to this device. Max. 7 1500 23 +150 +150 +300 Note These devices are ESD sensitive. The following precautions are strongly recommended. Ensure that an ESD approved carrier is used when dice are transported from one destination to another. Personal grounding is to be worn at all times when handling these devices. AMMC-6420 DC Specifications/Physical Properties [1] Parameters and Test Conditions Units Min. Typ. Max. Drain Supply Current under any RF power drive and temperature Vd=5.5 V, Vg set for Id Typical 1000 Vg qch-b Gate Supply Operating Voltage Id Q = 800 mA Thermal Resistance[2] Backside temperature, Tb = 25°C °C/W Ambient operational temperature TA=25°C unless otherwise noted. Channel-to-backside Thermal Resistance = 10.7°C/W at Tchannel Tc = 120°C as measured using infrared microscopy. Thermal Resis- tance at backside temperature Tb = 25°C calculated from measured data. AMMC-6420 RF Specifications [3, 4, 5] TA= 25°C, Vd=5.5, Id Q =800 mA, Zo=50 Symbol Gain P-1dB Parameters and Test Conditions Small-signal Gain[4] Ordering Information AMMC-6420-W10 = 10 devices per tray AMMC-6420-W50 = 50 devices per tray For product information and a complete list of distributors, please go to our web site Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright 2005-2008 Avago Technologies. All rights reserved. Obsoletes AV01-0219EN AV02-1370EN - September 4, 2008 |
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