ALM-1222 1.8-2.2GHz Low Noise, High Gain, High Linearity Balanced Amplifier Module
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ALM-1222-TR2G (pdf) |
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ALM-1222-BLKG |
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ALM-1222-TR1G |
PDF Datasheet Preview |
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ALM-1222 1.8-2.2GHz Low Noise, High Gain, High Linearity Balanced Amplifier Module Data Sheet Avago Technologies’ ALM-1222 is a very low noise, high linearity balanced amplifier module operating in the to 2.2GHz frequency range. The exceptional noise and linearity performances are achieved through the use of Avago Technologies’ proprietary 0.5um GaAs Enhancement-mode pHEMT process. The ALM-1222 is housed in a miniature x mm3 22-lead multiple-chips-on-board MCOB module package. The compact footprint and low profile makes this product an ideal choice for Wireless Infrastructure Basestation Tower-Mounted Amplifiers TMA , Radiocards and Multi-Carrier Driver Amplifiers in the cellular/ PCS/CDMA bands. Component Image x mm3 22-lead MCOB Top View AVAGO ALM-1222 MAYWWDD XXXX Bottom View Note Package marking provides orientation and identification “ALM-1222” = Device Part Number “YWWDD” = Year, work week and day of manufacture “XXXX” = Assembly lot number • Low noise figure • High linearity and P1dB • GaAs E-pHEMT Technology[1] • internal matching • Small package size 5x6x1.1 mm3 • 5V supply • Adjustable current for optimum NF or OIP3 • Excellent uniformity in product specifications • Tape-and-Reel packaging option available • MSL-2a and Lead-free • Point MTTF > 300 years at 120oC channel tempera- ture • Shutdown function • Diversity Antenna, TMA & Front End LNA for EGSM/ PCS/W-CDMA Base Stations. • Driver amplifier. Notes Enhancement mode technology employs positive gate voltage, thereby eliminating the need of negative gate voltage associated with conventional depletion mode devices. Attention Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 50 V ESD Human Body Model = 250 V Refer to Avago Technologies Application Note A004R Electrostatic Discharge, Damage and Control. Absolute Maximum Rating [2] TA=25oC Symbol Vdd Vctrl Pin,max Pdiss Tj TSTG Parameter Device Voltage, RF output to ground Control Voltage CW RF Input Power Vdd = Idd=280mA Total Power Dissipation [4] Junction Temperature Storage Temperature Units V dBm Product Consistency Distribution Charts [5,6] Process Capability for NF 150 Nominal = USL = 120 Std dev=0.014 CPK>2 frequency NF dB Figure 2.0GHz 5V, 280mA Absolute Max. 22 5 150 -65 to 150 Thermal Resistance [3] Vdd = 5.0V, Vctrl=2.2V qjc = 20 oC/W Operation of this device in ex3. cess of any of these limits may cause permanent damage. Part Number Ordering Information Part Number ALM-1222-BLKG ALM-1222-TR1G ALM-1222-TR2G No. of Devices 100 1000 3000 Container Antistatic bag 7” Reel 13” Reel For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright 2005-2009 Avago Technologies. All rights reserved. Obsoletes AV01-0058EN AV02-1470EN - April 7, 2009 |
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