AT-41511-TR1

AT-41511-TR1 Datasheet

Agilent AT-41511, AT-41533 General Purpose, Low Noise NPN Silicon Bipolar Transistors

Part	Datasheet
AT-41511-TR1	AT-41511-TR1 (pdf)

Related Parts	Information
AT-41533-TR1	AT-41533-TR1

PDF Datasheet Preview
Agilent AT-41511, AT-41533 General Purpose, Low Noise NPN Silicon Bipolar Transistors Data Sheet Agilent’s AT-41511 and AT-41533 are general purpose NPN bipolar transistors that offer excellent high frequency performance at an economical price. The AT-41533 uses the 3 lead SOT-23, while the AT-41511 places the same die in the lower parasitic 4 lead SOT-143. Both packages are industry standard, and compatible with high volume surface mount assembly techniques. The 4 micron emitter-to-emitter pitch of these transistors yields high performance products that can perform a multiplicity of tasks. The 14 emitter finger interdigitated geometry yields an intermediate-sized transistor with easy to match to impedances, low noise figure, and moderate power. Optimized for best performace from a 5 to 8 volt bias supply, these transistors are also good performers at V. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, or active mixer. An optimum noise match near 50 ohms at 900 MHz makes these devices particularly easy to use as LNAs. Typical amplifier designs at 900 MHz yield 1 dB noise figures with 15 dB or more Outline Drawing EMITTER COLLECTOR BASE EMITTER SOT 143 AT-41511 COLLECTOR BASE EMITTER SOT 23 AT-41533 associated gain at a 5 V, 5 mA bias, with good gain and noise figure obtainable at biases as low as 2 mA. The AT-415 series bipolar transistors are fabricated using Agilent’s 10 GHz fT Self-AlignedTransistor SAT process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metalization in the fabrication of these devices. • General Purpose NPN Bipolar Transistor • 900 MHz Performance AT-41511 1 dB NF, dB GA AT-41533 1 dB NF, dB GA • Characterized for 3, 5, and 8 Volt Use • SOT-23 and SOT-143 SMT Plastic Packages • Tape-and-Reel Packaging Option Available • Lead-free Option Available AT-41511, AT-41533 Absolute Maximum Ratings Parameter Units Absolute Maximum[1] VEBO VCBO VCEO IC PT Tj TSTG Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation[2,3] Junction Temperature Storage Temperature 20 12 50 225 150 -65 to 150 Thermal Resistance:[2] =550°C/W Notes Operation of this device above any one of these parameters may cause permanent damage. TMounting Surface = 25°C. Derate at mW/°C for TC > 26°C. Electrical Specifications, TA = 25°C Symbol hFE ICBO IEBO Parameters and Test Conditions Forward Current Transfer Ratio Ordering Information Part Numbers No. of Devices Comments AT-41511-BLK AT-41533-BLK Bulk AT-41511-BLKG AT-41533-BLKG Bulk AT-41511-TR1 AT-41533-TR1 3000 7" Reel AT-41511-TR1G AT-41533-TR1G 3000 7" Reel AT-41511-TR2 AT-41533-TR2 10000 13" Reel AT-41511-TR2G AT-41533-TR2G 10000 13" Reel Note Order part number with a “G” suffix if lead-free option is desired. Package Dimensions SOT-143 Plastic Package e2 e1 SOT-23 Plastic Package e2 e1 Notes XXX-package marking Drawings are not to scale DIMENSIONS mm SYMBOL A A1 B B1 C D E1 e e1 e2 E L MIN. MAX. e Notes XXX-package marking Drawings are not to scale DIMENSIONS mm SYMBOL MIN. MAX. For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada +1 800 235-0312 or 916 788-6763 Europe +49 0 6441 92460 China 10800 650 0017

PDF Datasheet Preview

Agilent AT-41511, AT-41533 General Purpose, Low Noise NPN Silicon Bipolar Transistors

Data Sheet

Agilent’s AT-41511 and AT-41533 are general purpose NPN bipolar transistors that offer excellent high frequency performance at an economical price. The AT-41533 uses the 3 lead SOT-23, while the AT-41511 places the same die in the lower parasitic 4 lead SOT-143. Both packages are industry standard, and compatible with high volume surface mount assembly techniques.

The 4 micron emitter-to-emitter pitch of these transistors yields high performance products that can perform a multiplicity of tasks. The 14 emitter finger interdigitated geometry yields an intermediate-sized transistor with easy to match to impedances, low noise figure, and moderate power.

Optimized for best performace from a 5 to 8 volt bias supply, these transistors are also good performers at V. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, or active mixer.

An optimum noise match near 50 ohms at 900 MHz makes these devices particularly easy to use as LNAs. Typical amplifier designs at 900 MHz yield 1 dB noise figures with 15 dB or more

Outline Drawing

EMITTER COLLECTOR

BASE EMITTER SOT 143 AT-41511

COLLECTOR

BASE EMITTER SOT 23 AT-41533
associated gain at a 5 V, 5 mA bias, with good gain and noise figure obtainable at biases as low as 2 mA.

The AT-415 series bipolar transistors are fabricated using Agilent’s 10 GHz fT Self-AlignedTransistor SAT process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metalization in the fabrication of these devices.
• General Purpose NPN Bipolar Transistor
• 900 MHz Performance AT-41511 1 dB NF, dB GA AT-41533 1 dB NF, dB GA
• Characterized for 3, 5, and 8 Volt Use
• SOT-23 and SOT-143 SMT Plastic Packages
• Tape-and-Reel Packaging Option Available
• Lead-free Option Available

AT-41511, AT-41533 Absolute Maximum Ratings

Parameter

Units

Absolute Maximum[1]

VEBO VCBO VCEO

IC PT Tj TSTG

Emitter-Base Voltage

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Power Dissipation[2,3]

Junction Temperature

Storage Temperature
20 12 50 225 150 -65 to 150

Thermal Resistance:[2] =550°C/W

Notes Operation of this device above any one
of these parameters may cause permanent damage. TMounting Surface = 25°C. Derate at mW/°C for TC > 26°C.

Electrical Specifications, TA = 25°C

Symbol hFE

ICBO IEBO

Parameters and Test Conditions

Forward Current Transfer Ratio
Ordering Information

Part Numbers

No. of Devices Comments

AT-41511-BLK

AT-41533-BLK

Bulk

AT-41511-BLKG AT-41533-BLKG

Bulk

AT-41511-TR1

AT-41533-TR1
3000
7" Reel

AT-41511-TR1G AT-41533-TR1G
3000
7" Reel

AT-41511-TR2

AT-41533-TR2
10000
13" Reel

AT-41511-TR2G AT-41533-TR2G
10000
13" Reel

Note Order part number with a “G” suffix if lead-free option is desired.

Package Dimensions

SOT-143 Plastic Package
e2 e1

SOT-23 Plastic Package
e2 e1

Notes XXX-package marking Drawings are not to scale

DIMENSIONS mm

SYMBOL A A1 B B1 C D E1 e e1 e2 E L

MIN.

MAX. e

Notes XXX-package marking Drawings are not to scale

DIMENSIONS mm

SYMBOL MIN. MAX.

For product information and a complete list of distributors, please go to our web site.

For technical assistance call:

Americas/Canada +1 800 235-0312 or 916 788-6763

Europe +49 0 6441 92460

China 10800 650 0017

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived AT-41511-TR1 Datasheet file may be downloaded here without warranties.

Datasheet ID: AT-41511-TR1 515842