TIC246D-S

TIC246D-S Datasheet

TIC246 SERIES SILICON TRIACS

Part	Datasheet
TIC246D-S	TIC246D-S (pdf)

Related Parts	Information
TIC246N-S	TIC246N-S
TIC246M-S	TIC246M-S

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TIC246 SERIES SILICON TRIACS High Current Triacs 16 A RMS Glass Passivated Wafer 400 V to 800 V Off-State Voltage 125 A Peak Current Max IGT of 50 mA Quadrants 1 - 3 This series is currently available, but not recommended for new designs. MT1 MT2 TO-220 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base. MDC2ACA absolute maximum ratings over operating case temperature unless otherwise noted RATING TIC246D Repetitive peak off-state voltage see Note 1 TIC246M TIC246S TIC246N Full-cycle RMS on-state current at or below 70°C case temperature see Note 2 Peak on-state surge current full-sine-wave at or below 25°C case temperature see Note 3 Peak gate current Operating case temperature range Storage temperature range Lead temperature mm from case for 10 seconds VDRM IT RMS ITSM IGM TC Tstg TL VALUE 400 600 700 800 16 125 ±1 -40 to +110 -40 to +125 UNIT A °C °C °C NOTES These values apply bidirectionally for any value of resistance between the gate and Main Terminal This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at the rate of 400 mA/°C. electrical characteristics at 25°C case temperature unless otherwise noted IDRM PARAMETER Repetitive peak off-state current Gate trigger current Gate trigger voltage On-state voltage VD = rated VDRM Vsupply = +12 V† Vsupply = +12 V† Vsupply = -12 V† Vsupply = -12 V† Vsupply = +12 V† Vsupply = +12 V† Vsupply = -12 V† Vsupply = -12 V† ITM = A TEST CONDITIONS IG = 0 RL = 10 Ω RL = 10 Ω RL = 10 Ω RL = 10 Ω RL = 10 Ω RL = 10 Ω RL = 10 Ω RL = 10 Ω IG = 50mA TC = 110°C

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TIC246 SERIES SILICON TRIACS

High Current Triacs 16 A RMS Glass Passivated Wafer 400 V to 800 V Off-State Voltage 125 A Peak Current Max IGT of 50 mA Quadrants 1 - 3

This series is currently available, but not recommended for new
designs.

MT1 MT2

TO-220 PACKAGE TOP VIEW

Pin 2 is in electrical contact with the mounting base.

MDC2ACA
absolute maximum ratings over operating case temperature unless otherwise noted

RATING

TIC246D

Repetitive peak off-state voltage see Note 1

TIC246M TIC246S

TIC246N

Full-cycle RMS on-state current at or below 70°C case temperature see Note 2

Peak on-state surge current full-sine-wave at or below 25°C case temperature see Note 3

Peak gate current

Operating case temperature range

Storage temperature range

Lead temperature mm from case for 10 seconds

VDRM

IT RMS ITSM IGM TC Tstg TL

VALUE 400 600 700 800 16 125 ±1
-40 to +110 -40 to +125

UNIT

A °C °C °C

NOTES These values apply bidirectionally for any value of resistance between the gate and Main Terminal This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at
the rate of 400 mA/°C.
electrical characteristics at 25°C case temperature unless otherwise noted

IDRM

PARAMETER

Repetitive peak off-state current

Gate trigger current

Gate trigger voltage

On-state voltage

VD = rated VDRM

Vsupply = +12 V† Vsupply = +12 V† Vsupply = -12 V† Vsupply = -12 V† Vsupply = +12 V† Vsupply = +12 V† Vsupply = -12 V† Vsupply = -12 V† ITM = A

TEST CONDITIONS

IG = 0

RL = 10 Ω RL = 10 Ω RL = 10 Ω RL = 10 Ω RL = 10 Ω RL = 10 Ω RL = 10 Ω RL = 10 Ω IG = 50mA

TC = 110°C

More datasheets: B88069X6721T502 | SEN0114 | 13842 | FIT0141 | HFX36S10 | SIL25C-12SNEG-V | 17-300240 | 17-300230 | 17-300250 | TIC246N-S

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Datasheet ID: TIC246D-S 522281