TIC216D-S

TIC216D-S Datasheet

TIC216 SERIES SILICON TRIACS

Part	Datasheet
TIC216D-S	TIC216D-S (pdf)

Related Parts	Information
TIC216S-S	TIC216S-S
TIC216M-S	TIC216M-S

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TIC216 SERIES SILICON TRIACS ● Sensitive Gate Triacs ● 6 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 5 mA Quadrants 1 - 3 MT1 MT2 TO-220 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base. MDC2ACA absolute maximum ratings over operating case temperature unless otherwise noted RATING VALUE UNIT OBSOLETE TIC216D Repetitive peak off-state voltage see Note 1 TIC216M TIC216S TIC216N Full-cycle RMS on-state current at or below 70°C case temperature see Note 2 Peak on-state surge current full-sine-waveat or below 25°C case temperature see Note 3 Peak gate current Peak gate power dissipation at or below 85°C case temperature pulse width 200 µs Average gate power dissipation at or below 85°C case temperature see Note 4 Operating case temperature range Storage temperature range Lead temperature mm from case for 10 seconds VDRM IT RMS ITSM IGM PGM PG AV TC Tstg TL 600 V -40 to +110 -40 to +125 NOTES These values apply bidirectionally for any value of resistance between the gate and Main Terminal This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at the rate of 150 mA/°C. This value applies for one 50-Hz full-sine-wave when the device is operating at or below the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. This value applies for a maximum averaging time of 20 ms. electrical characteristics at 25°C case temperature unless otherwise noted IDRM PARAMETER Repetitive peak off-state current Gate trigger current VD = rated VDRM Vsupply = +12 V† Vsupply = +12 V† Vsupply = -12 V† Vsupply = -12 V† TEST CONDITIONS IG = 0 RL = 10 RL = 10 RL = 10 RL = 10 TC = 110°C

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TIC216 SERIES SILICON TRIACS
● Sensitive Gate Triacs ● 6 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 5 mA Quadrants 1 - 3

MT1 MT2

TO-220 PACKAGE TOP VIEW

Pin 2 is in electrical contact with the mounting base.

MDC2ACA
absolute maximum ratings over operating case temperature unless otherwise noted

RATING

VALUE

UNIT

OBSOLETE TIC216D

Repetitive peak off-state voltage see Note 1

TIC216M TIC216S

TIC216N

Full-cycle RMS on-state current at or below 70°C case temperature see Note 2

Peak on-state surge current full-sine-waveat or below 25°C case temperature see Note 3

Peak gate current

Peak gate power dissipation at or below 85°C case temperature pulse width 200 µs

Average gate power dissipation at or below 85°C case temperature see Note 4

Operating case temperature range

Storage temperature range

Lead temperature mm from case for 10 seconds

VDRM

IT RMS ITSM IGM PGM PG AV TC Tstg TL
600 V
-40 to +110
-40 to +125

NOTES These values apply bidirectionally for any value of resistance between the gate and Main Terminal This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at the rate of 150 mA/°C. This value applies for one 50-Hz full-sine-wave when the device is operating at or below the rated value of on-state current. Surge
may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.

This value applies for a maximum averaging time of 20 ms.
electrical characteristics at 25°C case temperature unless otherwise noted

IDRM

PARAMETER Repetitive peak off-state current

Gate trigger
current

VD = rated VDRM

Vsupply = +12 V† Vsupply = +12 V† Vsupply = -12 V† Vsupply = -12 V†

TEST CONDITIONS

IG = 0

RL = 10 RL = 10 RL = 10 RL = 10

TC = 110°C

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Datasheet ID: TIC216D-S 522276