TIC126 SERIES SILICON CONTROLLED RECTIFIERS
Part | Datasheet |
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TIC126N-S (pdf) |
Related Parts | Information |
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TIC126S-S |
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TIC126M-S |
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TIC126D-S |
PDF Datasheet Preview |
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TIC126 SERIES SILICON CONTROLLED RECTIFIERS 12 A Continuous On-State Current 100 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 20 mA This series is obsolete and not recommended for new designs. TO-220 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base. MDC1ACA absolute maximum ratings over operating case temperature unless otherwise noted RATING TIC126D OBSOLETE Repetitive peak off-state voltage TIC126M TIC126S TIC126N TIC126D TIC126M TIC126S TIC126N Continuous on-state current at or below 70°C case temperature see Note 1 Average on-state current 180° conduction angle at or below 70°C case temperature see Note 2 Surge on-state current at or below 25°C case temperature see Note 3 Peak positive gate current pulse width 300 µs Peak gate power dissipation pulse width 300 µs Average gate power dissipation see Note 4 Operating case temperature range Storage temperature range VDRM VRRM IT RMS IT AV ITM IGM PGM PG AV TC Tstg Lead temperature mm from case for 10 seconds VALUE 400 600 700 800 400 600 700 800 12 100 3 5 1 -40 to +110 -40 to +125 UNIT A W °C °C °C TIC126 SERIES SILICON CONTROLLED RECTIFIERS electrical characteristics at 25°C case temperature unless otherwise noted PARAMETER TEST CONDITIONS MIN TYP MAX UNIT IDRM Repetitive peak off-state current |
More datasheets: CY7C1412BV18-200BZC | CY7C1412BV18-200BZI | CY7C1412BV18-250BZC | ADNS-3060 | T0054211799N | 10332 | 94805 | 94822 | TIC126S-S | TIC126M-S |
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