TIC106N-S

TIC106N-S Datasheet


TIC106 SERIES SILICON CONTROLLED RECTIFIERS

Part Datasheet
TIC106N-S TIC106N-S TIC106N-S (pdf)
Related Parts Information
TIC106S-S TIC106S-S TIC106S-S
TIC106M-S TIC106M-S TIC106M-S
TIC106D-S TIC106D-S TIC106D-S
PDF Datasheet Preview
TIC106 SERIES SILICON CONTROLLED RECTIFIERS
5 A Continuous On-State Current 30 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 200 µA

This series is obsolete and not recommended for new designs.

TO-220 PACKAGE TOP VIEW

Pin 2 is in electrical contact with the mounting base.

MDC1ACA
absolute maximum ratings over operating case temperature unless otherwise noted

RATING

TIC106D

OBSOLETE Repetitive peak off-state voltage see Note 1

TIC106M TIC106S

TIC106N

TIC106D

TIC106M TIC106S

TIC106N

Continuous on-state current at or below 80°C case temperature see Note 2

Average on-state current 180° conduction angle at or below 80°C case temperature
see Note 3

Surge on-state current at or below 25°C see Note 4

Peak positive gate current pulse width 300 µs

Peak gate power dissipation pulse width 300 µs

Average gate power dissipation see Note 5

Operating case temperature range

Storage temperature range

Lead temperature mm from case for 10 seconds

VDRM

VRRM

IT RMS IT AV ITSM IGM PGM PG AV

TC Tstg TL

VALUE
400 600 700 800 400 600 700 800
30 -40 to +110 -40 to +125 230

UNIT

A W °C °C °C

TIC106 SERIES SILICON CONTROLLED RECTIFIERS
electrical characteristics at 25°C case temperature unless otherwise noted

PARAMETER

TEST CONDITIONS

MIN TYP MAX UNIT

IDRM

Repetitive peak off-state current
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Datasheet ID: TIC106N-S 522271