TIC106 SERIES SILICON CONTROLLED RECTIFIERS
Part | Datasheet |
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TIC106N-S (pdf) |
Related Parts | Information |
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TIC106S-S |
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TIC106M-S |
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TIC106D-S |
PDF Datasheet Preview |
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TIC106 SERIES SILICON CONTROLLED RECTIFIERS 5 A Continuous On-State Current 30 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 200 µA This series is obsolete and not recommended for new designs. TO-220 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base. MDC1ACA absolute maximum ratings over operating case temperature unless otherwise noted RATING TIC106D OBSOLETE Repetitive peak off-state voltage see Note 1 TIC106M TIC106S TIC106N TIC106D TIC106M TIC106S TIC106N Continuous on-state current at or below 80°C case temperature see Note 2 Average on-state current 180° conduction angle at or below 80°C case temperature see Note 3 Surge on-state current at or below 25°C see Note 4 Peak positive gate current pulse width 300 µs Peak gate power dissipation pulse width 300 µs Average gate power dissipation see Note 5 Operating case temperature range Storage temperature range Lead temperature mm from case for 10 seconds VDRM VRRM IT RMS IT AV ITSM IGM PGM PG AV TC Tstg TL VALUE 400 600 700 800 400 600 700 800 30 -40 to +110 -40 to +125 230 UNIT A W °C °C °C TIC106 SERIES SILICON CONTROLLED RECTIFIERS electrical characteristics at 25°C case temperature unless otherwise noted PARAMETER TEST CONDITIONS MIN TYP MAX UNIT IDRM Repetitive peak off-state current |
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