BUT11-S
BUT11-S Datasheet
BUT11 NPN SILICON POWER TRANSISTOR
| Part | Datasheet |
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BUT11-S |
BUT11-S (pdf) |
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| BUT11 NPN SILICON POWER TRANSISTOR Rugged Triple-Diffused Planar Construction 100 W at 25°C Case Temperature 5 A Continuous Collector Current This series not recommended for new designs. TO-220 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature unless otherwise noted RATING Collector-base voltage IE = 0 VCBO OBSOLETE Collector-emitter voltage VBE = 0 Collector-emitter voltage IB = 0 Emitter-base voltage Continuous collector current Peak collector current see Note 1 Continuous device dissipation at or below 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1 This value applies for tp 10 ms, duty cycle VCES VCEO VEBO IC ICM Ptot Tj Tstg VALUE 850 400 10 5 10 100 -65 to +150 -65 to +150 UNIT V A W °C °C BUT11 NPN SILICON POWER TRANSISTOR electrical characteristics at 25°C case temperature unless otherwise noted PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Collector-emitter VCEO sus sustaining voltage IC = A L = 25 mH see Note 2 ICES IEBO Collector-emitter cut-off current Emitter cut-off current VCE = 850 V VCE = 850 V VEB = 10 V VBE = 0 VBE = 0 IC = 0 TC = 125°C 50 µA Forward current transfer ratio VCE = 5 V IC = A see Notes 3 and 4 Collector-emitter VCE sat saturation voltage |
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