BDW83B-S

BDW83B-S Datasheet

BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS

Part	Datasheet
BDW83B-S	BDW83B-S (pdf)

Related Parts	Information
BDW83C-S	BDW83C-S
BDW83D-S	BDW83D-S
BDW83-S	BDW83-S
BDW83A-S	BDW83A-S

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BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS G Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D G 125 W at 25°C Case Temperature G 15 A Continuous Collector Current G Minimum hFE of 750 at 3 V, 6 A SOT-93 PACKAGE TOP VIEW 1 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature unless otherwise noted RATING VALUE UNIT BDW83 OBSOLETE Collector-base voltage IE = 0 Collector-emitter voltage IB = 0 see Note 1 Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at or below 25°C case temperature see Note 2 Continuous device dissipation at or below 25°C free air temperature see Note 3 Unclamped inductive load energy see Note 4 Operating junction temperature range BDW83A BDW83B BDW83C BDW83D BDW83 BDW83A BDW83B BDW83C BDW83D VCBO VCEO VEBO IC IB Ptot Operating temperature range Tstg Operating free-air temperature range -65 to +150 -65 to +150 -65 to +150 NOTES These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case temperature at the rate of 1 W/°C. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of L = 20 mH, IB on = 5 mA, RBE = 100 VBE off = 0, RS = VCC = 20 V. PRODUCT INFORMATION BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature unless otherwise noted PARAMETER TEST CONDITIONS MIN TYP MAX BDW83 Collector-emitter V BR CEO breakdown voltage IC = 30 mA IB = 0 see Note 5 BDW83A

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BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS

G Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D

G 125 W at 25°C Case Temperature

G 15 A Continuous Collector Current

G Minimum hFE of 750 at 3 V, 6 A

SOT-93 PACKAGE TOP VIEW 1

Pin 2 is in electrical contact with the mounting base.

MDTRAAA
absolute maximum ratings at 25°C case temperature unless otherwise noted

RATING

VALUE

UNIT

BDW83

OBSOLETE Collector-base voltage IE = 0

Collector-emitter voltage IB = 0 see Note 1

Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at or below 25°C case temperature see Note 2 Continuous device dissipation at or below 25°C free air temperature see Note 3 Unclamped inductive load energy see Note 4 Operating junction temperature range

BDW83A BDW83B BDW83C BDW83D BDW83 BDW83A BDW83B BDW83C BDW83D

VCBO

VCEO

VEBO IC IB Ptot

Operating temperature range

Tstg

Operating free-air temperature range
-65 to +150
-65 to +150
-65 to +150

NOTES These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case temperature at the rate of 1 W/°C.

Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of L = 20 mH, IB on = 5 mA, RBE = 100

VBE off = 0, RS = VCC = 20 V.

PRODUCT INFORMATION

BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature unless otherwise noted

PARAMETER

TEST CONDITIONS

MIN TYP MAX

BDW83

Collector-emitter V BR CEO breakdown voltage

IC = 30 mA

IB = 0
see Note 5

BDW83A

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Datasheet ID: BDW83B-S 522132