BDV64B-S

BDV64B-S Datasheet

BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS

Part	Datasheet
BDV64B-S	BDV64B-S (pdf)

Related Parts	Information
BDV64A-S	BDV64A-S
BDV64-S	BDV64-S
BDV64C-S	BDV64C-S

PDF Datasheet Preview
BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base. MDTRAA absolute maximum ratings at 25°C case temperature unless otherwise noted RATING BDV64 OBSOLETE Collector-base voltage IE = 0 Collector-emitter voltage IB = 0 Emitter-base voltage Continuous collector current Peak collector current see Note 1 Continuous base current Continuous device dissipation at or below 25°C case temperature see Note 2 Continuous device dissipation at or below 25°C free air temperature see Note 3 Operating junction temperature range Storage temperature range Lead temperature mm from case for 10 seconds BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C VCBO VCEO VEBO IC ICM IB Ptot Tj Tstg TL NOTES This value applies for tp ms, duty cycle 10% Derate linearly to 150°C case temperature at the rate of W/°C. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. VALUE -60 -80 -100 -120 -60 -80 -100 -120 -5 -12 -15 125 -65 to +150 -65 to +150 260 UNIT V A W °C °C °C PRODUCT INFORMATION BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature unless otherwise noted PARAMETER TEST CONDITIONS MIN TYP MAX BDV64 Collector-emitter V BR CEO breakdown voltage IC = -30 mA IB = 0 see Note 4 BDV64A BDV64B -80 -100 BDV64C -120 VCB = -30 V IB = 0 BDV64 ICEO Collector-emitter cut-off current VCB = -40 V VCB = -50 V

PDF Datasheet Preview

BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS
● Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C
● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A

SOT-93 PACKAGE TOP VIEW

Pin 2 is in electrical contact with the mounting base.

MDTRAA
absolute maximum ratings at 25°C case temperature unless otherwise noted

RATING

BDV64

OBSOLETE Collector-base voltage IE = 0

Collector-emitter voltage IB = 0

Emitter-base voltage Continuous collector current Peak collector current see Note 1 Continuous base current Continuous device dissipation at or below 25°C case temperature see Note 2 Continuous device dissipation at or below 25°C free air temperature see Note 3 Operating junction temperature range Storage temperature range Lead temperature mm from case for 10 seconds

BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C

VCBO

VCEO

VEBO IC ICM IB Ptot Tj Tstg TL

NOTES This value applies for tp ms, duty cycle 10% Derate linearly to 150°C case temperature at the rate of W/°C.

Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.

VALUE
-60 -80 -100 -120 -60 -80 -100 -120 -5 -12 -15 125 -65 to +150 -65 to +150 260

UNIT

V A W °C °C °C

PRODUCT INFORMATION

BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature unless otherwise noted

PARAMETER

TEST CONDITIONS

MIN TYP MAX

BDV64

Collector-emitter V BR CEO breakdown voltage

IC = -30 mA IB = 0
see Note 4

BDV64A BDV64B
-80 -100

BDV64C
-120

VCB = -30 V IB = 0

BDV64

ICEO

Collector-emitter cut-off current

VCB = -40 V VCB = -50 V

More datasheets: 6255T1LC | 6255T5LC | 6255T5-5VLC | 6255T7LC | 6255T1-5V | 6255T1 | 6255T3 | BDV64A-S | BDV64-S | BDV64C-S

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Datasheet ID: BDV64B-S 522121