BD546-S

BD546-S Datasheet

BD546, BD546A, BD546B, BD546C PNP SILICON POWER TRANSISTORS

Part	Datasheet
BD546-S	BD546-S (pdf)

Related Parts	Information
BD546A-S	BD546A-S
BD546C-S	BD546C-S
BD546B-S	BD546B-S

PDF Datasheet Preview
BD546, BD546A, BD546B, BD546C PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD545 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available SOT-93 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature unless otherwise noted RATING BD546 Collector-base voltage IE = 0 BD546A BD546B VCBO OBSOLETE Collector-emitter voltage IB = 0 see Note 1 Emitter-base voltage Continuous collector current Continuous device dissipation at or below 25°C case temperature see Note 2 Continuous device dissipation at or below 25°C free air temperature see Note 3 Operating free air temperature range Operating junction temperature range Storage temperature range Lead temperature mm from case for 10 seconds BD546C BD546 BD546A BD546B BD546C NOTES These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case temperature at the rate of W/°C. VCEO VEBO IC Ptot TA Tj Tstg TL Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. VALUE -40 -60 -80 -100 -40 -60 -80 -100 -5 -15 85 -65 to +150 -65 to +150 -65 to +150 260 UNIT V A W °C °C °C °C PRODUCT INFORMATION BD546, BD546A, BD546B, BD546C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN TYP MAX BD546 Collector-emitter V BR CEO breakdown voltage IC = -30 mA see Note 4 IB = 0 BD546A BD546B BD546C -60 -80 -100 VCE = -40 V VBE = 0 BD546 Collector-emitter ICES cut-off current

PDF Datasheet Preview

BD546, BD546A, BD546B, BD546C PNP SILICON POWER TRANSISTORS
● Designed for Complementary Use with the BD545 Series
● 85 W at 25°C Case Temperature
● 15 A Continuous Collector Current
● Customer-Specified Selections Available

SOT-93 PACKAGE TOP VIEW

Pin 2 is in electrical contact with the mounting base.

MDTRAAA
absolute maximum ratings at 25°C case temperature unless otherwise noted

RATING

BD546

Collector-base voltage IE = 0

BD546A BD546B

VCBO

OBSOLETE Collector-emitter voltage IB = 0 see Note 1

Emitter-base voltage Continuous collector current Continuous device dissipation at or below 25°C case temperature see Note 2 Continuous device dissipation at or below 25°C free air temperature see Note 3 Operating free air temperature range Operating junction temperature range Storage temperature range Lead temperature mm from case for 10 seconds

BD546C BD546 BD546A BD546B BD546C

NOTES These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case temperature at the rate of W/°C.

VCEO

VEBO IC Ptot TA Tj Tstg TL

Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.

VALUE
-40 -60 -80 -100 -40 -60 -80 -100 -5 -15 85 -65 to +150 -65 to +150 -65 to +150 260

UNIT

V A W °C °C °C °C

PRODUCT INFORMATION

BD546, BD546A, BD546B, BD546C PNP SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN TYP MAX

BD546

Collector-emitter V BR CEO breakdown voltage

IC = -30 mA see Note 4

IB = 0

BD546A BD546B BD546C
-60 -80 -100

VCE = -40 V

VBE = 0

BD546

Collector-emitter ICES cut-off current

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived BD546-S Datasheet file may be downloaded here without warranties.

Datasheet ID: BD546-S 522108