BD540C-S

BD540C-S Datasheet


BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS

Part Datasheet
BD540C-S BD540C-S BD540C-S (pdf)
Related Parts Information
BD540A-S BD540A-S BD540A-S
BD540B-S BD540B-S BD540B-S
PDF Datasheet Preview
BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS

Designed for Complementary Use with the BD539 Series 45 W at 25°C Case Temperature 5 A Continuous Collector Current Customer-Specified Selections Available

This not recommended for new designs.

TO-220 PACKAGE TOP VIEW

Pin 2 is in electrical contact with the mounting base.

MDTRACA
absolute maximum ratings at 25°C case temperature unless otherwise noted

RATING

BD540

OBSOLETE Collector-base voltage IE = 0

Collector-emitter voltage IB = 0 see Note 1

Emitter-base voltage Continuous collector current Continuous device dissipation at or below 25°C case temperature see Note 2 Continuous device dissipation at or below 25°C free air temperature see Note 3 Operating free air temperature range Operating junction temperature range Storage temperature range Lead temperature mm from case for 10 seconds

BD540A BD540B BD540C BD540 BD540A BD540B BD540C

NOTES These values apply when the base-emitter diode is open circuited.

VCBO

VCEO

VEBO IC Ptot TA Tj Tstg TL

Derate linearly to 150°C case temperature at the rate of W/°C.

Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

VALUE
-40 -60 -80 -100 -40 -60 -80 -100 -5 -5 45 2 -65 to +150 -65 to +150 -65 to +150 260

UNIT

V A W °C °C °C °C

BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN TYP MAX

BD540

Collector-emitter V BR CEO breakdown voltage

IC = -30 mA see Note 4

IB = 0

BD540A BD540B BD540C
-60 -80 -100

VCE = -40 V

VBE = 0

BD540

Collector-emitter ICES cut-off current

VCE = -60 V VCE = -80 V

VBE = 0 VBE = 0

BD540A BD540B
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Datasheet ID: BD540C-S 522102