BD243C-S

BD243C-S Datasheet

BD243, BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS

Part	Datasheet
BD243C-S	BD243C-S (pdf)

Related Parts	Information
BD243-S	BD243-S
BD243A-S	BD243A-S
BD243B-S	BD243B-S

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OBSOLETE BD243, BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN TYP MAX BD243 Collector-emitter V BR CEO breakdown voltage IC = 30 mA see Note 5 IB = 0 BD243A BD243B BD243C VCE = 55 V VBE = 0 BD243 Collector-emitter ICES cut-off current VCE = 70 V VCE = 90 V VBE = 0 VBE = 0 BD243A BD243B VCE = 115 V VBE = 0 BD243C ICEO Collector cut-off current VCE = 30 V VCE = 60 V IB = 0 IB = 0 BD243/243A BD243B/243C Emitter cut-off IEBO current VEB = 5 V IC = 0 Forward current transfer ratio VCE = 4 V VCE = 4 V IC = A IC = 3 A 30 see Notes 5 and 6 Collector-emitter VCE sat saturation voltage IB = 1 A IC = 6 A

PDF Datasheet Preview

OBSOLETE

BD243, BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN TYP MAX

BD243

Collector-emitter V BR CEO breakdown voltage

IC = 30 mA see Note 5

IB = 0

BD243A

BD243B

BD243C

VCE = 55 V

VBE = 0

BD243

Collector-emitter ICES cut-off current

VCE = 70 V VCE = 90 V

VBE = 0 VBE = 0

BD243A BD243B

VCE = 115 V

VBE = 0

BD243C

ICEO

Collector cut-off current

VCE = 30 V VCE = 60 V

IB = 0 IB = 0

BD243/243A BD243B/243C

Emitter cut-off

IEBO current

VEB = 5 V

IC = 0

Forward current
transfer ratio

VCE = 4 V VCE = 4 V

IC = A IC = 3 A
30 see Notes 5 and 6

Collector-emitter

VCE sat saturation voltage

IB = 1 A

IC = 6 A

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Datasheet ID: BD243C-S 522095