BLM7G1822S-20PB BLM7G1822S-20PBG LDMOS 2-stage Power MMIC Datasheet

BLM7G1822S-20PB and BLM7G1822S-20PBG LDMOS 2-stage power MMIC

The BLM7G1822S-20PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or straight lead outline.

Features
• Designed for broadband operation (frequency 1805 MHz to 2170 MHz)
• High section-to-section isolation enabling multiple combinations
• Integrated temperature compensated bias
• Biasing of individual stages is externally accessible
• Integrated ESD protection
• Excellent thermal stability
• High power gain
• On-chip matching for ease of use
• Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)

Applications
• RF power MMIC for multi-carrier and multi-standard GSM, W-CDMA and LTE base stations in the 1805 MHz to 2170 MHz frequency range.

BLM7G1822S-40PBY Datasheet RF FET LDMOS 65V 31.5DB SOT12111

BLM7G1822S-20PBY Datasheet RF FET LDMOS 65V 32.3DB SOT12111

BLM7G1822S-40PBGY Datasheet RF FET LDMOS 65V 31.5DB SOT12121

BLM7G1822S-40ABY Datasheet RF FET LDMOS 65V 31.5DB SOT12112

BLM7G1822S-40ABGY Datasheet RF FET LDMOS 65V 31.5DB SOT12122

BLM7G1822S-20PBGY Datasheet RF FET LDMOS 65V 32.3DB SOT12121

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived BLM7G1822S-20PB BLM7G1822S-20PBG LDMOS 2-stage Power MMIC Datasheet file may be downloaded here without warranties.