BLL8H1214L-250 BLL8H1214LS-250 LDMOS L-band Radar Power Transistor Datasheet

BLL8H1214L-250 and BLL8H1214LS-250 LDMOS L-band radar power transistor

250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

Features
• Easy power control
• Integrated dual side ESD protection
• High flexibility with respect to pulse formats
• Excellent ruggedness
• High efficiency
• Excellent thermal stability
• Designed for broadband operation (1.2 GHz to 1.4 GHz)
• Internally matched for ease of use
• Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)

Applications
• L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency range

BLL8H1214L-250U Datasheet RF FET LDMOS 100V 17DB SOT502A

BLL8H1214LS-250U Datasheet RF FET LDMOS 100V 17DB SOT502B

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