BLL8H0514-25 Power LDMOS Transistor Datasheet

BLL8H0514-25 Power LDMOS transistor

25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.

Features
• Easy power control
• Integrated dual side ESD protection
• High flexibility with respect to pulse formats
• Excellent ruggedness
• High efficiency
• Excellent thermal stability
• Designed for broadband operation (0.5 GHz to 1.4 GHz)
• Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications
• Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range

BLL8H0514-25U Datasheet RF FET LDMOS 100V 21DB SOT467C

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