BLL6H1214L-250 BLL6H1214LS-250 LDMOS L-band Radar Power Transistor Datasheet

BLL6H1214L-250 and BLL6H1214LS-250 LDMOS L-band radar power transistor

250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

Features
• Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 300 s with  of 10 %  Output power = 250 W  Power gain = 17 dB  Efficiency = 55 %
• Easy power control
• Integrated ESD protection
• High flexibility with respect to pulse formats
• Excellent ruggedness
• High efficiency
• Excellent thermal stability
• Designed for broadband operation (1.2 GHz to 1.4 GHz)
• Internally matched for ease of use
• Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC

Applications
• L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency range

BLL6H1214LS-250,11 Datasheet RF FET LDMOS 100V 17DB SOT502B

BLL6H1214L-250,112 Datasheet RF FET LDMOS 100V 17DB SOT502A

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived BLL6H1214L-250 BLL6H1214LS-250 LDMOS L-band Radar Power Transistor Datasheet file may be downloaded here without warranties.