BLL1214-250R LDMOS L-band Radar Power Transistor Datasheet

BLL1214-250R LDMOS L-band radar power transistor

Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange.

Features
• Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 36 V, an IDq of 150 mA, a tp of 1 ms with  of 10 %
• Output power = 250 W
• Power gain = 13 dB
• Efficiency = 47 %
• High power gain
• Easy power control
• Excellent ruggedness
• Source on mounting base eliminates DC isolators, reducing common mode inductance.

Applications
• L-band radar applications in the 1.2 GHz to 1.4 GHz frequency range

BLL1214-250R,112 Datasheet RF FET LDMOS 75V 13DB SOT502A

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