BLL1214-250 L-band Radar LDMOS Transistor Datasheet

Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange.

FEATURES
• High power gain
• Easy power control
• Excellent ruggedness
• Source on mounting base eliminates DC isolators, reducing common mode inductance.

APPLICATIONS
• L-band radar applications in the 1200 to 1400 MHz frequency range.

BLL1214-250,112 Datasheet RF FET LDMOS 75V 12DB SOT502A

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