A4G16QE8BNPBSE

A4G16QE8BNPBSE Datasheet

ATP A4G16QE8BNPBSE

Part	Datasheet
A4G16QE8BNPBSE	A4G16QE8BNPBSE (pdf)

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Electronics, Inc. 2590 North First Street, San Jose, CA 95131, U.S.A. Tel 408-732-5000 Fax 408-732-5055 ATP A4G16QE8BNPBSE 16GB DDR4-2133 UNBUFFERED NON-ECC SODIMM DESCRIPTION The ATP A4G16QE8BNPBSE is a high performance 16GB DDR4-2133 Unbuffered NON-ECC SDRAM memory module. It is organized as 2048M x 64 in a 260-pin Small Outline Dual-In-Line Memory Module SODIMM package. The module utilizes sixteen 1024Mx8 DDR4 SDRAMs in FBGA package. The module consists of a 512-byte serial EEPROM, which contains the module configuration information. KEY FEATURES • High Density 16GB 2048M x 64 • DIMM Rank 2 Rank • Cycle Time 0.93ns 1067MHz • CAS Latency 15 • Power supply VDD=1.2V ± 0.06V VPP=2.5V± 0.125V VDDSPD=2.2V~3.6V • Nominal and dynamic on-die termination ODT for data, strobe, and mask signals • Low-power auto self refresh LPASR • Data bus inversion DBI for data bus • 16 internal banks x8 4 groups of 4 banks each • Internal self calibration through ZQ • Temperature controlled refresh TCR • Asynchronous Reset • refresh interval at lower than TCASE85°C, refresh interval at 85°C < TCASE < 95 °C • Support address and command signals parity function • Selectable BC4 or BL8 on-the fly OTF • Dynamic On Die Termination • Fly-by topology • Full module heat spreader • PCB Height inches 30mm • Minimum Thickness of Golden Finger 30 Micro-inch • RoHS compliant Part No. A4G16QE8BNPBSE Max Freq 1067MHz x2 Your Ultimate Memory Solution! Page 1 of 11 Interface POD12 ATP A4G16QE8BNPBSE PIN DESCRIPTION Pin Name A0~A16 Address Inputs A10/AP Address Input/Auto precharge A12/BC_n Address Input/Burst chop BA0,BA1 SDRAM Bank Address BG0,BG1 Bank group address inputs RAS_n Row address strobe input CAS_n Column address strobe input WE_n Write enable input CS0_n, CS1_n Chip Selects CK0_t, CK1_t Clock Inputs, positive line CK0_c, CK1_c Clock Inputs, negative line CKE0, CKE1 Clock Enables C0~C2 Chip ID

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Electronics, Inc.
2590 North First Street, San Jose, CA 95131, U.S.A.

Tel 408-732-5000 Fax 408-732-5055

ATP A4G16QE8BNPBSE
16GB DDR4-2133 UNBUFFERED NON-ECC SODIMM

DESCRIPTION The ATP A4G16QE8BNPBSE is a high performance 16GB DDR4-2133 Unbuffered NON-ECC SDRAM memory module. It is organized as 2048M x 64 in a 260-pin Small Outline Dual-In-Line Memory Module SODIMM package. The module utilizes sixteen 1024Mx8 DDR4 SDRAMs in FBGA package. The module consists of a 512-byte serial EEPROM, which contains the module configuration information.

KEY FEATURES
• High Density 16GB 2048M x 64
• DIMM Rank 2 Rank
• Cycle Time 0.93ns 1067MHz
• CAS Latency 15
• Power supply VDD=1.2V ± 0.06V VPP=2.5V± 0.125V VDDSPD=2.2V~3.6V
• Nominal and dynamic on-die termination ODT for data, strobe, and mask signals
• Low-power auto self refresh LPASR
• Data bus inversion DBI for data bus
• 16 internal banks x8 4 groups of 4 banks each
• Internal self calibration through ZQ
• Temperature controlled refresh TCR
• Asynchronous Reset
• refresh interval at lower than TCASE85°C, refresh interval at 85°C < TCASE < 95 °C
• Support address and command signals parity function
• Selectable BC4 or BL8 on-the fly OTF
• Dynamic On Die Termination
• Fly-by topology
• Full module heat spreader
• PCB Height inches 30mm
• Minimum Thickness of Golden Finger 30 Micro-inch
• RoHS compliant

Part No. A4G16QE8BNPBSE

Max Freq 1067MHz x2

Your Ultimate Memory Solution!

Page 1 of 11

Interface POD12

ATP A4G16QE8BNPBSE

PIN DESCRIPTION

Pin Name

A0~A16

Address Inputs

A10/AP

Address Input/Auto precharge

A12/BC_n

Address Input/Burst chop

BA0,BA1

SDRAM Bank Address

BG0,BG1

Bank group address inputs

RAS_n

Row address strobe input

CAS_n

Column address strobe input

WE_n

Write enable input

CS0_n, CS1_n

Chip Selects

CK0_t, CK1_t

Clock Inputs, positive line

CK0_c, CK1_c

Clock Inputs, negative line

CKE0, CKE1

Clock Enables

C0~C2

Chip ID

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Datasheet ID: A4G16QE8BNPBSE 519540