HMC758LP3E

HMC758LP3E Datasheet

7 Typical Applications The HMC758LP3 E is ideal for • Cellular Infrastructure, WiMAX & LTE/4G • Software Defined Radios • Repeaters and Femtocells • Access Points • Test & Measurement Equipment

Part	Datasheet
HMC758LP3E	HMC758LP3E (pdf)

Related Parts	Information
121703-HMC758LP3	121703-HMC758LP3

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Amplifiers - Low Noise - SMT v00.1108 7 Typical Applications The HMC758LP3 E is ideal for • Cellular Infrastructure, WiMAX & LTE/4G • Software Defined Radios • Repeaters and Femtocells • Access Points • Test & Measurement Equipment Functional Diagram HMC758LP3 / 758LP3E GaAs SMT pHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz Noise Figure dB Gain 22 dB Output IP3 +37 dBm Single Supply +3V to +5V 50 Ohm Matched Input/Output 16 Lead 3x3 mm SMT Package 9 mm2 The HMC758LP3 E is a GaAs pHEMT MMIC Low Noise Amplifier that is ideal for Cellular Infrastructure, WiMAX & LTE/4G basestation front-end receivers operating between 700 and 2200 MHz. The amplifier has been optimized to provide dB noise figure, 21 dB gain and +37 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent with minimal external matching and bias decoupling components. The HMC758LP3 E can be biased with +3V to +5V and features an externally adjustable supply current, which allows the designer to tailor the linearity performance of the LNA for each application. Electrical Specifications, TA = +25° C, R1= 390Ω, R2= 560Ω* Parameter Frequency Range Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression P1dB Saturated Output Power Psat Output Third Order Intercept IP3 Supply Current Idd Vdd = +3V Min. Typ. Max. Min. Typ. Max. 700 - 1700 1700 - 2200 Vdd = +5V Min. Typ. Max. Min. Typ. Max. 700 - 1700 1700 - 2200 Units MHz dB/ °C dB 80 102 130 80 102 130 190 227 260 190 227 260 mA * R1 & R2 resistors set current, see application circuit herein For price, delivery and to place orders Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone 978-250-3343 Fax 978-250-3373 Order On-line at Application Support Phone 978-250-3343 or Amplifiers - Low Noise - SMT v00.1108 Broadband Gain & Return Loss RESPONSE dB 25 20 15 10 5 0 -5 -10 -15 -20 -25 S11 1 Vdd=5V Vdd=3V S21 FREQUENCY GHz Gain vs. Temperature, Vdd = +3V GAIN dB +25C +85C -40C FREQUENCY GHz Output Return Loss vs. Temperature, Vdd = +5V +25C +85C -40C [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material Rogers 4350 or Arlon 25FR. For price, delivery and to place orders Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone 978-250-3343 Fax 978-250-3373 Order On-line at Application Support Phone 978-250-3343 or

PDF Datasheet Preview

Amplifiers - Low Noise - SMT
v00.1108
7 Typical Applications The HMC758LP3 E is ideal for
• Cellular Infrastructure, WiMAX & LTE/4G
• Software Defined Radios
• Repeaters and Femtocells
• Access Points
• Test & Measurement Equipment

Functional Diagram

HMC758LP3 / 758LP3E

GaAs SMT pHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz

Noise Figure dB Gain 22 dB Output IP3 +37 dBm Single Supply +3V to +5V 50 Ohm Matched Input/Output 16 Lead 3x3 mm SMT Package 9 mm2

The HMC758LP3 E is a GaAs pHEMT MMIC Low Noise Amplifier that is ideal for Cellular Infrastructure, WiMAX & LTE/4G basestation front-end receivers operating between 700 and 2200 MHz. The amplifier has been optimized to provide dB noise figure, 21 dB gain and +37 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent with minimal external matching and bias decoupling components. The HMC758LP3 E can be biased with +3V to +5V and features an externally adjustable supply current, which allows the designer to tailor the linearity performance of the LNA for each application.

Electrical Specifications, TA = +25° C, R1= 390Ω, R2= 560Ω*

Parameter

Frequency Range Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression P1dB Saturated Output Power Psat Output Third Order Intercept IP3 Supply Current Idd

Vdd = +3V

Min. Typ. Max. Min. Typ. Max.
700 - 1700
1700 - 2200

Vdd = +5V

Min. Typ. Max. Min. Typ. Max.
700 - 1700
1700 - 2200

Units

MHz dB/ °C dB
80 102 130 80 102 130 190 227 260 190 227 260 mA
* R1 & R2 resistors set current, see application circuit herein

For price, delivery and to place orders Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone 978-250-3343 Fax 978-250-3373 Order On-line at Application Support Phone 978-250-3343 or

Amplifiers - Low Noise - SMT
v00.1108

Broadband Gain & Return Loss

RESPONSE dB
25 20 15 10
5 0 -5 -10 -15 -20 -25

S11 1

Vdd=5V Vdd=3V S21

FREQUENCY GHz

Gain vs. Temperature, Vdd = +3V

GAIN dB
+25C +85C
-40C

FREQUENCY GHz

Output Return Loss vs. Temperature, Vdd = +5V
+25C +85C
-40C
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material Rogers 4350 or Arlon 25FR.

For price, delivery and to place orders Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone 978-250-3343 Fax 978-250-3373 Order On-line at Application Support Phone 978-250-3343 or

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Datasheet ID: HMC758LP3E 517972