HMC414MS8G
HMC414MS8G Datasheet
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| Part | Datasheet |
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HMC414MS8G |
HMC414MS8G (pdf) |
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| Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED HMC414* Product Page Quick Links Last Content Update 08/30/2016 Comparable Parts View a parametric search of comparable parts Evaluation Kits • HMC414MS8G Evaluation Board Documentation Application Notes • AN-1363 Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers • Broadband Biasing of Amplifiers General Application Note • MMIC Amplifier Biasing Procedure Application Note • Thermal Management for Surface Mount Components General Application Note Data Sheet • HMC414 Data Sheet Tools and Simulations • HMC414 S-Parameter Reference Materials Quality Documentation • HMC Legacy PCN MS##, MS##E and MS##G,MS##GE packages - Relocation of pre-existing production equipment to new building • Package/Assembly Qualification Test Report MS8G QTR 2014-00393 • PCN MS, QS, SOT, SOIC packages - Sn/Pb plating vendor change • Semiconductor Qualification Test Report GaAs HBT-B QTR 2013-00229 Design Resources • HMC414 Material Declaration • PCN-PDN Information • Quality And Reliability • Symbols and Footprints Discussions View all HMC414 EngineerZone Discussions Sample and Buy Visit the product page to see pricing options Technical Support Submit a technical question or find your regional support number THIS PAGE INTENTIONALLY LEFT BLANK HMC414MS8G / 414MS8GE v04.0607 GaAs InGaP HBT MMIC POWER AMPLIFIER, - GHz This amplifier is ideal for use as a power amplifier for - GHz applications • BLUETOOTH • MMDS Gain 20 dB Saturated Power +30 dBm 32% PAE Supply Voltage +2.75V to +5V Power Down Capability Low External Part Count Functional Diagram The HMC414MS8G & HMC414MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor HBT MMIC Power amplifiers which operate between and GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +30 dBm of saturated power at 32% PAE from a +5V supply voltage. The amplifier can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/ current control. LINEAR & POWER AMPLIFIERS - SMT 11 - 58 Electrical Specifications, TA = +25° C, As a Function of Vs, Vpd = 3.6V Parameter Vs = 3.6V Min. Typ. Max. Min. Vs = 5V Typ. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material Rogers 4350 11 - 64 For price, delivery, and to place orders, please contact Hittite Microwave Corporation 20 Alpha Road, Chelmsford, MA 01824 Phone 978-250-3343 Fax 978-250-3373 Order On-line at v04.0607 Application Circuit HMC414MS8G / 414MS8GE GaAs InGaP HBT MMIC POWER AMPLIFIER, - GHz LINEAR & POWER AMPLIFIERS - SMT Impedance Length TL1 50 Ohm TL2 50 Ohm TL3 50 Ohm * For 5V operation on Vctl line, select R1, R2 such that 3.6V is presented on Pins 6 and For price, delivery, and to place orders, please contact Hittite Microwave Corporation 20 Alpha Road, Chelmsford, MA 01824 Phone 978-250-3343 Fax 978-250-3373 Order On-line at 11 - 65 |
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