BLF7G22L-250P,118

BLF7G22L-250P,118 Datasheet

BLF7G22L-250P BLF7G22LS-250P

Part	Datasheet
BLF7G22L-250P,118	BLF7G22L-250P,118 (pdf)

Related Parts	Information
BLF7G22L-250P,112	BLF7G22L-250P,112

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BLF7G22L-250P BLF7G22LS-250P Power LDMOS transistor Product profile 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation VDS PL AV ACPR mA V W dB % dBc 2-carrier W-CDMA 2110 to 2170 1900 28 70 [1] Test signal 3GPP test model 1 64 DPCH PAR = dB at % probability on CCDF carrier spacing 5 MHz. Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2110 MHz to 2170 MHz frequency range BLF7G22L-250P BLF7G22LS-250P Power LDMOS transistor Pinning information Table Pinning BLF7G22L-250P SOT539A drain1 drain2 gate1 gate2 source BLF7G22LS-250P SOT539B drain1 drain2 gate1 gate2 source [1] Connected to flange. Ordering information Simplified outline Graphic symbol 34 [1] sym117 34 [1] sym117 Table Ordering information Type number Package Name Description BLF7G22L-250P - Flanged balanced LDMOST ceramic package 2 mounting holes 4 leads BLF7G22LS-250P - Earless flanged LDMOST ceramic package 4 leads Version SOT539A SOT539B Limiting values Table Limiting values In accordance with the Absolute Maximum Rating System IEC Symbol Parameter Conditions drain-source voltage gate-source voltage drain current Tstg storage temperature junction temperature Min Max Unit +13 V +150 C 200 C BLF7G22L-250P_22LS-250P#4 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. All rights reserved. 2 of 14 BLF7G22L-250P BLF7G22LS-250P Power LDMOS transistor Thermal characteristics Table Thermal characteristics Symbol Parameter Conditions Rth j-c thermal resistance from junction to case Tcase = 80 C PL = 70 W VDS = 28 V IDq = 1900 mA Characteristics Typ Unit K/W Table Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Ordering information 2 Limiting values. 2 Thermal characteristics 3 Characteristics 3 Test information 3 Ruggedness in class-AB operation 3 Impedance information 4 1 Tone CW 5 1-carrier W-CDMA 6 2-carrier W-CDMA 7 Test circuit. 8 Package outline 9 Handling information. 11 Abbreviations 11 Legal information. 12 Data sheet status 12 Definitions 12 Disclaimers 12 Trademarks. 13 Contact information. 13 Contents 14 Please be aware that important notices concerning this document and the product s described herein, have been included in section ‘Legal information’. Ampleon The Netherlands B.V. All rights reserved. For more information, please visit For sales office addresses, please visit: Date of release 1 September 2015 Document identifier BLF7G22L-250P_22LS-250P#4

PDF Datasheet Preview

BLF7G22L-250P BLF7G22LS-250P

Power LDMOS transistor

Product profile
250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.

Table Typical performance

Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Mode of operation

VDS PL AV

ACPR
mA V W
dB % dBc
2-carrier W-CDMA
2110 to 2170
1900 28 70
[1] Test signal 3GPP test model 1 64 DPCH PAR = dB at % probability on CCDF carrier spacing 5 MHz.

Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2110 MHz to 2170 MHz frequency range

BLF7G22L-250P BLF7G22LS-250P

Power LDMOS transistor

Pinning information

Table Pinning

BLF7G22L-250P SOT539A
drain1
drain2
gate1
gate2
source

BLF7G22LS-250P SOT539B
drain1
drain2
gate1
gate2
source
[1] Connected to flange.
Ordering information

Simplified outline Graphic symbol
34 [1]
sym117
34 [1]
sym117
Table Ordering information

Type number

Package

Name Description

BLF7G22L-250P -

Flanged balanced LDMOST ceramic package 2 mounting holes 4 leads

BLF7G22LS-250P -

Earless flanged LDMOST ceramic package 4 leads

Version SOT539A

SOT539B

Limiting values

Table Limiting values In accordance with the Absolute Maximum Rating System IEC

Symbol Parameter

Conditions
drain-source voltage
gate-source voltage
drain current

Tstg
storage temperature
junction temperature

Min Max Unit
+13 V
+150 C
200 C

BLF7G22L-250P_22LS-250P#4

All information provided in this document is subject to legal disclaimers.

Ampleon The Netherlands B.V. All rights reserved.
2 of 14

BLF7G22L-250P BLF7G22LS-250P

Power LDMOS transistor

Thermal characteristics

Table Thermal characteristics

Symbol Parameter

Conditions

Rth j-c
thermal resistance from junction to case Tcase = 80 C PL = 70 W VDS = 28 V IDq = 1900 mA

Characteristics

Typ Unit K/W

Table Characteristics

Tj = 25 C unless otherwise specified.

Symbol Parameter
Ordering information 2

Limiting values. 2

Thermal characteristics 3

Characteristics 3

Test information 3

Ruggedness in class-AB operation 3

Impedance information 4
1 Tone CW 5
1-carrier W-CDMA 6
2-carrier W-CDMA 7

Test circuit. 8

Package outline 9

Handling information. 11

Abbreviations 11

Legal information. 12

Data sheet status 12

Definitions 12

Disclaimers 12

Trademarks. 13

Contact information. 13

Contents 14

Please be aware that important notices concerning this document and the product s described herein, have been included in section ‘Legal information’.

Ampleon The Netherlands B.V.

All rights reserved.

For more information, please visit For sales office addresses, please visit:

Date of release 1 September 2015

Document identifier BLF7G22L-250P_22LS-250P#4

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived BLF7G22L-250P,118 Datasheet file may be downloaded here without warranties.

Datasheet ID: BLF7G22L-250P,118 517634