BLF7G22L-130,118
BLF7G22L-130,118 Datasheet
BLF7G22L-130 BLF7G22LS-130
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BLF7G22L-130,118 |
BLF7G22L-130,118 (pdf) |
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| BLF7G22L-130 BLF7G22LS-130 Power LDMOS transistor Product profile 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation VDS PL AV ACPR mA V W dB % dBc 2-carrier W-CDMA 2110 to 2170 950 28 30 1-carrier W-CDMA 2110 to 2170 950 28 33 [1] Test signal 3GPP test model 1 64 DPCH PAR = dB at % probability on CCDF carrier spacing 5 MHz. [2] Test signal 3GPP test model 1 64 DPCH PAR = dB at % probability on CCDF. Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation 2000 MHz to 2200 MHz Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent digital pre-distortion capability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range BLF7G22L-130 BLF7G22LS-130 Power LDMOS transistor Pinning information Table Pinning BLF7G22L-130 SOT502A drain gate source BLF7G22LS-130 SOT502B drain gate source [1] Connected to flange. Ordering information Simplified outline Graphic symbol sym112 3 [1] sym112 Table Ordering information Type number Package Name Description BLF7G22L-130 - flanged LDMOST ceramic package 2 mounting holes 2 leads BLF7G22LS-130 - earless flanged LDMOST ceramic package 2 leads Version SOT502A SOT502B Limiting values Table Limiting values In accordance with the Absolute Maximum Rating System IEC Symbol Parameter Conditions drain-source voltage gate-source voltage drain current Tstg storage temperature junction temperature Min Max Unit +13 V +150 C 225 C BLF7G22L-130_7G22LS-130#5 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. All rights reserved. 2 of 15 BLF7G22L-130 BLF7G22LS-130 Power LDMOS transistor Thermal characteristics Table Symbol Rth j-c Thermal characteristics Parameter thermal resistance from junction to case Characteristics Conditions Tcase = 80 C PL = 30 W Typ Unit K/W Table Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter V BR DSS VGS th IDSS drain-source breakdown voltage gate-source threshold voltage drain leakage current IDSX Ordering information 2 Limiting values. 2 Thermal characteristics 3 Characteristics 3 Test information 3 Ruggedness in class-AB operation 3 Impedance information 4 1 Tone CW 5 1-carrier W-CDMA 6 2-carrier W-CDMA 5 MHz carrier spacing 7 2-carrier W-CDMA 10 MHz carrier spacing 8 Test circuit. 9 Package outline 10 Abbreviations 12 Legal information. 13 Data sheet status 13 Definitions 13 Disclaimers 13 Trademarks. 14 Contact information. 14 Contents 15 Please be aware that important notices concerning this document and the product s described herein, have been included in section ‘Legal information’. Ampleon The Netherlands B.V. All rights reserved. For more information, please visit For sales office addresses, please visit: Date of release 1 September 2015 Document identifier BLF7G22L-130_7G22LS-130#5 |
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