AOWF12T60
AOWF12T60 Datasheet
AOWF12T60
| Part | Datasheet |
|---|---|
AOWF12T60 |
AOWF12T60 (pdf) |
| PDF Datasheet Preview |
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| AOWF12T60 600V,12A N-Channel MOSFET Product Summary The AOWF12T60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. VDS Tj,max IDM RDS ON ,max Qg,typ Eoss 400V 100% UIS Tested 100% Rg Tested Top View TO-262F Bottom View 700 48A < 33nC 4.5µJ AOWF12T60 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Maximum Units Drain-Source Voltage Gate-Source Voltage ±30 Continuous Drain Current TC=25°C TC=100°C 12* 9* Pulsed Drain Current C Avalanche Current C,J Repetitive avalanche energy C,J Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt dv/dt A mJ V/ns TC=25°C Power Dissipation B Derate above 25oC W/ oC Junction and Storage Temperature Range TJ, TSTG -55 to 150 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Junction-to-Case * Drain current limited by maximum junction temperature. Maximum 65 Units °C/W °C/W |
| More datasheets: L6R12-300 | L6R12-070 | L6R12H-070 | L6R12-360 | L6R12H-059 | L6R12H-050 | L6R12H-090 | L6R12H-120 | HFW11R-2STBE1LF | 40370 |
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