AOW410

AOW410 Datasheet

AOW410

Part	Datasheet
AOW410	AOW410 (pdf)

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AOW410 100V N-Channel MOSFET SDMOS TM The AOW410 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. Product Summary VDS ID at VGS=10V RDS ON at VGS=10V RDS ON at VGS= 7V 100% UIS Tested 100% Rg Tested 100V 150A < < TO-262 Top View Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current G TC=25°C TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS,IAR EAS,EAR TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±25 150 108 405 12 10 50 125 333 167 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t 10s Steady-State Steady-State Typ 12 54 Max 15 65 Units V A mJ W W °C

PDF Datasheet Preview

AOW410
100V N-Channel MOSFET SDMOS TM

The AOW410 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications.

Product Summary

VDS ID at VGS=10V RDS ON at VGS=10V RDS ON at VGS= 7V
100% UIS Tested 100% Rg Tested
100V 150A < <

TO-262

Top View

Bottom View

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current G

TC=25°C TC=100°C

Pulsed Drain Current C

Continuous Drain

TA=25°C

Current

TA=70°C

Avalanche Current C

Avalanche energy L=0.1mH C

IDSM

IAS,IAR EAS,EAR

TC=25°C Power Dissipation B TC=100°C

TA=25°C Power Dissipation A TA=70°C

PDSM

Junction and Storage Temperature Range

TJ, TSTG

Maximum 100 ±25 150 108 405 12 10 50 125 333 167
-55 to 175

Thermal Characteristics

Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D

Maximum Junction-to-Case
t 10s Steady-State Steady-State

Typ 12 54

Max 15 65

Units V

A mJ W

W °C

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Datasheet ID: AOW410 516294