AOTF8T50P_001
AOTF8T50P_001 Datasheet
AOTF8T50P
| Part | Datasheet |
|---|---|
AOTF8T50P_001 |
AOTF8T50P_001 (pdf) |
| PDF Datasheet Preview |
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| AOTF8T50P 500V,8A N-Channel MOSFET • Trench Power AlphaMOS-II technology • Low RDS ON • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant Product Summary VDS Tj,max IDM RDS ON ,max Qg,typ Eoss 400V • General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Telecom 100% UIS Tested 100% Rg Tested Top View TO-220F 600V 32A < 13nC 2.5µJ AOTF8T50P Orderable Part Number AOTF8T50P AOTF8T50PL Package Type TO-220F Pb Free TO-220F Green Form Tube Minimum Order Quantity 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOTF8T50P AOTF8T50PL Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt J IDM IAR EAR EAS dv/dt ±30 421 50 15 TC=25°C Power Dissipation B Derate above 25°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL -55 to 150 300 |
| More datasheets: 1.20123.0220000 | 1.20122.0420000 | 1.20122.0030000 | 5.05510.4210000 | 5.05510.6440000 | 5.37540.0248622 | 5.58007.0010000 | 1.71212.0110000 | 5.76204.4010400 | 5.76204.4030400 |
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