AOT462_001
AOT462_001 Datasheet
AOT462 N-Channel Enhancement Mode Field Effect Transistor
| Part | Datasheet |
|---|---|
AOT462_001 |
AOT462_001 (pdf) |
| Related Parts | Information |
|---|---|
AOT462 |
AOT462 |
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AOT462_002 |
AOT462_002 |
| PDF Datasheet Preview |
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| AOT462 N-Channel Enhancement Mode Field Effect Transistor The AOT462 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in UPS, high current switching applications. Standard Product AOT462 is Pb-free meets ROHS & Sony 259 specifications . VDS V = 60V ID = 70A RDS ON < V GS = 10V VGS = 10V TO-220 D Top View Drain Connected to Tab Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C CurrentG TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.3mH C TC=25°C Power Dissipation B TC=100°C Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 70 120 26 101 100 50 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Case B Steady-State Steady-State Typ 45 Max 60 Units V A mJ W °C Units °C/W °C/W Alpha & Omega Semiconductor, Ltd. AOT462 Electrical Characteristics TJ=25°C unless otherwise noted Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250uA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V TJ=55°C 1 µA |
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