AOT12N60_001

AOT12N60_001 Datasheet

AOT12N60/AOTF12N60

Part	Datasheet
AOT12N60_001	AOT12N60_001 (pdf)

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AOT12N60/AOTF12N60 600V,12A N-Channel MOSFET Product Summary The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS on , Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. For Halogen Free add "L" suffix to part number AOT12N60L & AOTF12N60L VDS ID at VGS=10V RDS ON at VGS=10V 100% UIS Tested 100% Rg Tested TO-220 Top View TO-220F 12A < Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter AOT12N60 AOTF12N60 Drain-Source Voltage Gate-Source Voltage ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A AOT12N60 65 AOTF12N60 65 -- Maximum Junction-to-Case * Drain current limited by maximum junction temperature. Units V A mJ V/ns W/ oC °C Units °C/W °C/W °C/W

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AOT12N60/AOTF12N60
600V,12A N-Channel MOSFET

Product Summary

The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS on , Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.

For Halogen Free add "L" suffix to part number AOT12N60L & AOTF12N60L

VDS ID at VGS=10V RDS ON at VGS=10V
100% UIS Tested 100% Rg Tested

TO-220

Top View

TO-220F
12A <

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

AOT12N60

AOTF12N60

Drain-Source Voltage

Gate-Source Voltage
±30

Continuous Drain TC=25°C

Current

TC=100°C

Pulsed Drain Current C

Avalanche Current C

Repetitive avalanche energy C

Single plused avalanche energy G

MOSFET dv/dt ruggedness

Peak diode recovery dv/dt

IDM IAR EAR EAS dv/dt

TC=25°C Power Dissipation B Derate above 25oC

Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics

TJ, TSTG TL
-55 to 150 300

Parameter Maximum Junction-to-Ambient A,D

Maximum Case-to-sink A

AOT12N60 65

AOTF12N60 65 --

Maximum Junction-to-Case
* Drain current limited by maximum junction temperature.

Units V

A mJ V/ns W/ oC °C

Units °C/W °C/W °C/W

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Datasheet ID: AOT12N60_001 516286