AON6758_103
AON6758_103 Datasheet
AON6758
| Part | Datasheet |
|---|---|
AON6758_103 |
AON6758_103 (pdf) |
| Related Parts | Information |
|---|---|
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AON6758_104 |
AON6758_104 |
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AON6758_102 |
AON6758_102 |
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AON6758_101 |
AON6758_101 |
| PDF Datasheet Preview |
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| AON6758 30V N-Channel AlphaMOS • Latest Trench Power AlphaMOS αMOS LV technology • Integrated Schottky Diode SRFET • Very Low RDS on at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial Product Summary VDS ID at VGS=10V RDS ON at VGS=10V RDS ON at VGS = 4.5V 100% UIS Tested 100% Rg Tested 30V 32A < < Top View DFN5X6 Bottom View PIN1 Top View SRFETTM Soft Recovery MOSFET Integrated Schottky Diode Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current G TC=25°C TC=100°C Pulsed Drain Current C Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C Avalanche energy L=0.05mH C VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 32 25 128 27 21 50 63 36 41 16 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady-State 24 53 Maximum Junction-to-Case |
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