AON5802A

AON5802A Datasheet

AON5802A/AON5802AL, rev C

Part	Datasheet
AON5802A	AON5802A (pdf)

PDF Datasheet Preview
AOS Semiconductor Product Reliability Report Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel 408 830-9742 Jun 23, 2008 Table of Contents: Product Description Package and Die information III. Environmental Stress Test Summary and Result IV. Reliability Evaluation Quality Assurance Information I. Product Description: The AON5802A uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS MAX rating. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its common drain configuration. Standard Product AON5802A is Pb-free meets ROHS & Sony 259 specifications . Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Maximum Drain-Source Voltage Gate-Source Voltage ± 12 Continuous Drain TA=25°C Current TA=70°C ID Pulsed Drain Current Power Dissipation Junction and Storage Temperature Range TA=25°C TA=70°C IDM PD TJ, TSTG -55 to 150 Units V A Thermal Characteristics Parameter Maximum Junction-toAmbient Maximum Junction-toAmbient Maximum Junction-to-Lead T 10s SteadyState SteadyState Units °C/W °C/W °C/W II. Die / Package Information:

PDF Datasheet Preview

AOS Semiconductor Product Reliability Report

Plastic Encapsulated Device

ALPHA & OMEGA Semiconductor, Inc
495 Mercury Drive Sunnyvale, CA 94085 U.S.

Tel 408 830-9742

Jun 23, 2008

Table of Contents:

Product Description

Package and Die information

III. Environmental Stress Test Summary and Result

IV. Reliability Evaluation

Quality Assurance Information

I. Product Description:

The AON5802A uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS MAX rating. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its common drain configuration. Standard Product AON5802A is Pb-free meets ROHS & Sony 259 specifications .

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Maximum

Drain-Source Voltage

Gate-Source Voltage
± 12

Continuous Drain

TA=25°C

Current

TA=70°C ID

Pulsed Drain Current

Power Dissipation Junction and Storage Temperature Range

TA=25°C TA=70°C

IDM PD

TJ, TSTG
-55 to 150

Units V A

Thermal Characteristics Parameter Maximum Junction-toAmbient Maximum Junction-toAmbient

Maximum Junction-to-Lead

T 10s

SteadyState

SteadyState

Units
°C/W
°C/W
°C/W

II. Die / Package Information:

More datasheets: ARK-2150F-S6A1E | 808-B-4A | 808-B-2A | 808-B-1A | GAN FET BOOK-WIPO | 277200125100002 | 277200125102001 | 277200125102002 | 277200125103002 | 677200265300675

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Datasheet ID: AON5802A 516250