AON3810
AON3810 Datasheet
AON3810
| Part | Datasheet |
|---|---|
AON3810 |
AON3810 (pdf) |
| PDF Datasheet Preview |
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| AON3810 20V Dual N-Channel MOSFET The AON3810 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS MAX rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its commondrain configuration. Product Summary VDS V = 20V ID = 8.5A VGS = 10V RDS ON < VGS = 10V RDS ON < VGS = 4.5V RDS ON < VGS = 2.5V RDS ON < VGS = 1.8V ESD Rating 2000V HBM Top View DFN 3x3 Bottom View Top View G1 D1 Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±12 30 -55 to 150 Units V W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t 10s Steady-State 40 75 50 95 Maximum Junction-to-Lead C Steady-State Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AON3810 Electrical Characteristics TJ=25°C unless otherwise noted Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS |
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