AOL1440 N-Channel Enhancement Mode Field Effect Transistor
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AOL1440 (pdf) |
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AOL1440 N-Channel Enhancement Mode Field Effect Transistor FFeeaattuurreess The AOL1440 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics. This device is ideally suite for use as a low side switch in CPU core power conversion. -RoHS Compliant -Halogen and Antimony Free Green Device* VVDDSS VV ==2255VV IIDD==7755AA VVGGSS==1100VV UIS Tested UIS Tested Rg,Ciss,Coss,CrsRsgT,eCsitsesd,Coss,Crss Tested Ultra SO-8TM Top View Bottom tab connected to drain Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C G Current B,G, TC=100°C B Pulsed Drain Current Continuous Drain TA=25°C Current G TA=70°C IDSM Avalanche Current C Repetitive avalanche energy L=0.3mHC TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-AmbientA Maximum Junction-to-AmbientA t 10s Steady-State Maximum Junction-to-CaseC Steady-State Maximum 25 ±30 85 66 200 21 17 30 135 75 37 -55 to 175 Typ 19 45 Max 25 55 2 Units V A mJ W W °C Units °C/W °C/W °C/W |
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