AOL1418
AOL1418 Datasheet
AOL1418 N-Channel Enhancement Mode Field Effect Transistor
| Part | Datasheet |
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AOL1418 |
AOL1418 (pdf) |
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| AOL1418 N-Channel Enhancement Mode Field Effect Transistor The AOL1418 uses advanced trench technology to provide excellent RDS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. -RoHS Compliant -Halogen and Antimony Free Green Device* VDS V = 30V ID = 85A VGS = 10V RDS ON < 6 VGS = 10V RDS ON < VGS = 4.5V UIS Tested Rg,Ciss,Coss,Crss Tested Ultra SO-8TM Top View Bottom tab connected to drain Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C G Current B TC=100°C Pulsed Drain CurrentI Continuous Drain TA=25°C Current G TA=70°C IDSM Avalanche Current C Repetitive avalanche energy L=0.3mH C TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 85 70 200 15 12 30 135 100 50 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case C t 10s Steady-State Steady-State Typ 37 Max 25 60 Units V A mJ W W °C Units °C/W °C/W °C/W |
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