AOL1206
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AOL1206 (pdf) |
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AOL1206 30V N-Channel MOSFET Product Summary The AOL1206 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS ON and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode. VDS ID at VGS=10V RDS ON at VGS=10V RDS ON at VGS = 4.5V 100% UIS Tested 100% Rg Tested 30V 54A < < 8.5m: UltraSO-8TM Top View Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current G TC=25°C TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 54 42 250 16 13 30 45 62 31 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady-State RTJA 16 38 Maximum Junction-to-Case Steady-State RTJC Max 20 46 |
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