AOD472
AOD472 Datasheet
AOD472 N-Channel Enhancement Mode Field Effect Transistor
| Part | Datasheet |
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AOD472 |
AOD472 (pdf) |
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| AOD472 N-Channel Enhancement Mode Field Effect Transistor The AOD472 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. VDS V = 25V ID = 55A VGS = 10V RDS ON <6 VGS = 10V RDS ON VGS = 4.5V 193 18 100% UIS Tested 100% Rg Tested TO-252 Top View D-PAK Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Pulsed Forward Diode CurrentC Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 25 ±20 55 43 200 50 125 60 30 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t 10s Steady-State 15 41 20 50 Maximum Junction-to-Case B Steady-State Units V mJ W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AOD472 Electrical Characteristics TJ=25°C unless otherwise noted Parameter |
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