AOD413
AOD413 Datasheet
AOD413 P-Channel Enhancement Mode Field Effect Transistor
| Part | Datasheet |
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AOD413 |
AOD413 (pdf) |
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| AOD413 P-Channel Enhancement Mode Field Effect Transistor The AOD413 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. -RoHS Compliant -Halogen Free* VDS V = -40V ID = -24A VGS = -10V RDS ON < VGS = -10V RDS ON < VGS = -4.5V 100% UIS Tested 100% Rg Tested TO-252 Top View D-PAK Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C G Current B TA=100°C Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH Single pulse avalanche energy L=0.3mH EAS TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum -40 ±20 -24 -18 -30 -24 30 60 50 25 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t 10s Steady-State 25 50 Maximum Junction-to-Case C Steady-State Alpha & Omega Semiconductor, Ltd. Units V A mJ W W °C Units °C/W °C/W °C/W AOD413 Electrical Characteristics TJ=25°C unless otherwise noted Parameter Conditions |
| More datasheets: FDPF7N50 | 139A-403G | DDC144EU-7 | DDC114YU-7 | DDC114EU-7 | DDC143TU-7 | DDC114TU-7 | 831 | B41-0001 | B41-0002 |
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