AOD3C60

AOD3C60 Datasheet

AOD3C60

Part	Datasheet
AOD3C60	AOD3C60 (pdf)

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AOD3C60 600V,3A N-Channel MOSFET Product Summary The AOD3C60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS on , Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. VDS Tj,max IDM RDS ON ,max Qg,typ Eoss 400V 100% UIS Tested! 100% Rg Tested! 700 19A < 10.3nC 2µC Top View TO252 DPAK Bottom View AOD3C60 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentB TC=25°C TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy H MOSFET dv/dt ruggedness Peak diode recovery dv/dt IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 600 ±30 3 19 6 18 218 100 20 89 -50 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Typical 45 Maximum 55 Units V A mJ V/ns W/ oC °C °C Units °C/W °C/W °C/W Page 1 of 6 AOD3C60 Electrical Characteristics TJ=25°C unless otherwise noted Parameter Conditions Min Typ Max Units

PDF Datasheet Preview

AOD3C60
600V,3A N-Channel MOSFET

Product Summary

The AOD3C60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS on , Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs.

VDS Tj,max IDM RDS ON ,max Qg,typ Eoss 400V
100% UIS Tested! 100% Rg Tested!
700 19A < 10.3nC 2µC

Top View

TO252 DPAK

Bottom View

AOD3C60

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain CurrentB

TC=25°C TC=100°C

Pulsed Drain Current C

Avalanche Current C

Repetitive avalanche energy C

Single pulsed avalanche energy H

MOSFET dv/dt ruggedness Peak diode recovery dv/dt

IDM IAR EAR EAS dv/dt

TC=25°C Power Dissipation B Derate above 25oC

Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds

TJ, TSTG TL

Maximum 600 ±30 3 19 6 18 218 100 20 89
-50 to 150

Thermal Characteristics

Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F

Typical 45

Maximum 55

Units V

A mJ V/ns W/ oC °C °C

Units °C/W °C/W °C/W

Page 1 of 6

AOD3C60

Electrical Characteristics TJ=25°C unless otherwise noted

Parameter

Conditions

Min Typ Max Units

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Datasheet ID: AOD3C60 516218