AOD3C50
Part | Datasheet |
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AOD3C50 (pdf) |
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AOD3C50 500V,3A N-Channel MOSFET • Trench Power AlphaMOS-II technology • Low RDS ON • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant Product Summary VDS Tj,max IDM RDS ON ,max Qg,typ Eoss 400V • General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Telecom 100% UIS Tested 100% Rg Tested 600V 12A < 12nC 1.5µJ TO-252 DPAK Top View Bottom View G AOD3C50 Orderable Part Number AOD3C50 Package Type TO-252 Form Minimum Order Quantity Tape & Reel 2500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy H MOSFET dv/dt ruggedness Peak diode recovery dv/dt IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 500 ±30 3* 3 12 3 152 100 20 83 -55 to 150 Units V |
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