AOD518_050

AOD518_050 Datasheet


AOD518/AOI518

Part Datasheet
AOD518_050 AOD518_050 AOD518_050 (pdf)
Related Parts Information
AOD518 AOD518 AOD518
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AOD518/AOI518
30V N-Channel AlphaMOS
• Latest Trench Power MOSFET technology
• Very Low RDS on at 4.5V VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant

Product Summary

VDS ID at VGS=10V RDS ON at VGS=10V RDS ON at VGS = 4.5V

Application
• DC/DC Converters in Computing
• Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested 100% Rg Tested
30V 46A < <

TopView

TO252 DPAK

Bottom View

Top View

TO-251B IPAK

Bottom View

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current G

TC=25°C TC=100°C

Pulsed Drain Current C

Continuous Drain Current

TA=25°C TA=70°C

IDSM

Avalanche Current C

Avalanche energy L=0.1mH C

VDS Spike
100ns

VSPIKE

TC=25°C Power Dissipation B TC=100°C

TA=25°C Power Dissipation A TA=70°C

PDSM

Junction and Storage Temperature Range

TJ, TSTG

Maximum 30 ±20 46 36 200 18 14 25 31 36 50 25
-55 to 175

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady-State
16 41
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Datasheet ID: AOD518_050 516213