AOD518_050
AOD518_050 Datasheet
AOD518/AOI518
| Part | Datasheet |
|---|---|
AOD518_050 |
AOD518_050 (pdf) |
| Related Parts | Information |
|---|---|
AOD518 |
AOD518 |
| PDF Datasheet Preview |
|---|
| AOD518/AOI518 30V N-Channel AlphaMOS • Latest Trench Power MOSFET technology • Very Low RDS on at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID at VGS=10V RDS ON at VGS=10V RDS ON at VGS = 4.5V Application • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested 30V 46A < < TopView TO252 DPAK Bottom View Top View TO-251B IPAK Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current G TC=25°C TC=100°C Pulsed Drain Current C Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C Avalanche energy L=0.1mH C VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 46 36 200 18 14 25 31 36 50 25 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady-State 16 41 |
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