AOI4C60
AOI4C60 Datasheet
AOD4C60/AOI4C60
| Part | Datasheet |
|---|---|
AOI4C60 |
AOI4C60 (pdf) |
| Related Parts | Information |
|---|---|
AOD4C60 |
AOD4C60 |
| PDF Datasheet Preview |
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| AOD4C60/AOI4C60 600V,4A N-Channel MOSFET Product Summary The AOD4C60 & AOI4C60 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS on , Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS Tj,max IDM RDS ON ,max Qg,typ Eoss 400V 100% UIS Tested! 100% Rg Tested! 700V 27A < 14nC 2.7µJ Top View TO252 DPAK Bottom View Top View TO251A IPAK Bottom View AOD4C60 AOI4C60 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Maximum Drain-Source Voltage Gate-Source Voltage ±30 Continuous Drain CurrentB TC=25°C TC=100°C Pulsed Drain Current C Avalanche Current C,K Repetitive avalanche energy C,K Single pulsed avalanche energy H MOSFET dv/dt ruggedness Peak diode recovery dv/dt dv/dt 100 20 TC=25°C Power Dissipation B Derate above 25oC 125 1 Junction and Storage Temperature Range TJ, TSTG -50 to 150 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Typical 45 Maximum 55 1 Units V |
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