AO6801A
AO6801A Datasheet
AO6801A
| Part | Datasheet |
|---|---|
AO6801A |
AO6801A (pdf) |
| PDF Datasheet Preview |
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| AO6801A 30V Dual P-Channel MOSFET The AO6801A uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS ID at VGS=-10V RDS ON at VGS =-10V RDS ON at VGS =-4.5V RDS ON at VGS =-2.5V -30V -2.3A < < < TSOP6 Top View Bottom View Top View S1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25°C TA=70°C Pulsed Drain Current C TA=25°C Power Dissipation B TA=70°C Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±12 -2 -11 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady-State 78 106 Maximum Junction-to-Lead Steady-State Max 110 150 80 Units V A W °C Units °C/W °C/W °C/W Page 1 of 5 AO6801A Electrical Characteristics TJ=25°C unless otherwise noted Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage |
| More datasheets: AS1363-BSTT-33 | AS1363-BSTT-12 | AS1363-BSTT-45 | AS1363-BSTT-15 | AS1363-BSTT-18 | AS1363-BSTT-30 | AS1363-ST-AD_EK_ST | M13229 SL002 | M13229 SL005 | M13229 SL001 |
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