AO6704
AO6704 Datasheet
AO6704
| Part | Datasheet |
|---|---|
AO6704 |
AO6704 (pdf) |
| PDF Datasheet Preview |
|---|
| AO6704 30V N-Channel MOSFET The AO6704/L uses advanced trench technology to provide excellent R DS ON and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Product Summary VDS V = 30V ID = 3.6A VGS = 10V RDS ON < VGS = 10V RDS ON < VGS = 4.5V RDS ON < VGS = 2.5V SCHOTTKY VDS V = 20V IF = 1A TSOP6 Top View Bottom View Top View K1 S2 G3 6A 5D 4D Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C TA=70°C Continuous Forward Current A Pulsed Forward Current B TA=25°C TA=70°C Power Dissipation Junction and Storage Temperature Range TA=25°C TA=70°C PD TJ, TSTG MOSFET 30 ±12 10 -55 to 150 Parameter Thermal Characteristics MOSFET Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t 10s Steady-State 70 102 Maximum Junction-to-Lead C Steady-State Thermal Characteristics Schottky Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t 10s Steady-State 129 158 Maximum Junction-to-Lead C Steady-State Schottky 20 1 10 -55 to 150 Max 90 130 80 160 200 80 Units V A V A |
| More datasheets: HTC-70M | HTC-65M | BK/HTC-150M | BK/HTC-140M | BK/HTC-40M | BK/HTC-55M | BK/HTC-70M | BK/HTC-35M | BK/HTC-65M | 204-10SURC/S400-A6 |
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