AO6414
AO6414 Datasheet
AO6414
| Part | Datasheet |
|---|---|
AO6414 |
AO6414 (pdf) |
| PDF Datasheet Preview |
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| AO6414 55V N-Channel MOSFET The AO6414 uses advanced trench technology to provide excellent RDS ON and low gate charge. It offers operation over a wide gate drive range from 2.5V to 12V. This device is suitable for use as a load switch. Product Summary VDS V = 55V ID = 2.4A VGS = 4.5V RDS ON < VGS = 4.5V RDS ON < VGS = 2.5V TSOP6 Top View Bottom View Top View Pin1 D1 D2 G3 4D 5D 6S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B Power Dissipation TA=25°C TA=70°C Junction and Storage Temperature Range TJ, TSTG Maximum 55 ±12 9 -55 to 150 Units V W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t 10s Steady-State 58 94 Maximum Junction-to-Lead C Steady-State Max 80 120 50 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO6414 Electrical Characteristics TJ=25°C unless otherwise noted Parameter Conditions |
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