AO4842L
AO4842L Datasheet
AO4842 Dual N-Channel Enhancement Mode Field Effect Transistor
| Part | Datasheet |
|---|---|
AO4842L |
AO4842L (pdf) |
| PDF Datasheet Preview |
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| AO4842 Dual N-Channel Enhancement Mode Field Effect Transistor The AO4842/L uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. AO4842 and AO4842L are electrically identical. -RoHS Compliant -AO4842L is Halogen Free VDS V = 30V ID = 7.5A VGS = 10V RDS ON < VGS = 10V RDS ON < VGS = 4.5V UIS Tested Rg,Ciss,Coss,Crss Tested S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SOIC-8 G1 S1 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current AF TA=70°C Pulsed Drain Current B Power Dissipation TA=25°C TA=70°C Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 30 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t 10s Steady-State 50 82 Maximum Junction-to-Lead C Steady-State Units V W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4842 Electrical Characteristics TJ=25°C unless otherwise noted Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage |
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