AO4821L
AO4821L Datasheet
AO4821L
| Part | Datasheet |
|---|---|
AO4821L |
AO4821L (pdf) |
| PDF Datasheet Preview |
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| AO4821L 12V Dual P-Channel MOSFET Product Summary The AO4821L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. VDS ID at VGS=-4.5V RDS ON at VGS=-4.5V RDS ON at VGS =-2.5V RDS ON at VGS =-1.8V -12V -9A < < < Top View SOIC-8 Bottom View Top View G2 2 S1 3 D2 G1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25°C TA=70°C Pulsed Drain Current C TA=25°C Power Dissipation B TA=70°C Junction and Storage Temperature Range TJ, TSTG Maximum -12 ±8 -9 -7 -60 2 -55 to 150 G2 S1 Thermal Characteristics Parameter Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady-State 48 74 Maximum Junction-to-Lead Steady-State Max 90 40 Units V A W °C Units °C/W °C/W °C/W Page 1 of 5 AO4821L Electrical Characteristics TJ=25°C unless otherwise noted Parameter Conditions Min Typ Max Units |
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