AO4772
Part | Datasheet |
---|---|
![]() |
AO4772 (pdf) |
PDF Datasheet Preview |
---|
AO4772 30V N-Channel MOSFET Product Summary AO4772 uses advanced trench technology to provide excellent RDS ON and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch,or for "standard buck" DC-DC conversion applications. VDS ID at VGS=10V RDS ON at VGS=10V RDS ON at VGS = 4.5V Schottky VKA IF VF at IF=1A 100% UIS Tested 100% Rg Tested 30V 6A < < 30V 4A <0.45V Top View SOIC-8 Bottom View Top View Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter MOSFET Drain-Source Voltage Gate-Source Voltage ±20 Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C IAS, IAR EAS, EAR Continuous Forward TA=25°C Current TA=70°C TA=25°C Power Dissipation B TA=70°C Junction and Storage Temperature Range TJ, TSTG -55 to 150 Thermal Characteristics Parameter MOSFET Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady-State 48 74 Maximum Junction-to-Lead |
More datasheets: 677200701403568 | CDBZ5T30100-HF | TEL0108 | 1617050T | 1617400 | 1617050 | BXB50-24S15FLTJ | 18490 | CDBFN1100-HF | DCS04S0A0S06PFA |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived AO4772 Datasheet file may be downloaded here without warranties.