AO4771L
AO4771L Datasheet
AO4771L
| Part | Datasheet |
|---|---|
AO4771L |
AO4771L (pdf) |
| PDF Datasheet Preview |
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| AO4771L 30V P-Channel MOSFET with Schottky Diode Product Summary AO4771L uses advanced trench technology to provide excellent RDS ON and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch,or for "standard buck" DC-DC conversion applications. VDS ID at VGS=-10V RDS ON at VGS=-10V RDS ON at VGS=-4.5V Schottky VKA IF VF at IF=1A -30V -4A < < 30V 4A <0.5V Top View SOIC-8 Bottom View Top View 8K 7K 6D 5D Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter MOSFET Drain-Source Voltage Gate-Source Voltage ±20 Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C IAS, IAR EAS, EAR Continuous Forward TA=25°C Current TA=70°C TA=25°C Power Dissipation B TA=70°C Junction and Storage Temperature Range TJ, TSTG -55 to 150 Thermal Characteristics Parameter MOSFET Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t 10s Steady-State 48 74 |
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