AO4722
AO4722 Datasheet
AO4722
| Part | Datasheet |
|---|---|
AO4722 |
AO4722 (pdf) |
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| AO4722 30V N-Channel MOSFET SRFET TM SRFET TM The AO4722 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Product Summary VDS V = 30V ID =11.6A VGS = 10V RDS ON < VGS = 10V RDS ON < VGS = 4.5V 100% UIS Tested 100% Rg Tested Top View SOIC-8 Bottom View SRFETTM Soft Recovery MOSFET Integrated Schottky Diode Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter 10 Sec Steady State Drain-Source Voltage Gate-Source Voltage ±20 Continuous Drain TA=25°C Current A TA=70°C IDSM Pulsed Drain Current B Avalanche Current B Repetitive avalanche energy L=0.3mH B Power Dissipation TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V mJ W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t 10s Steady-State Steady-State Typ 32 60 17 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4722 |
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