AO4613_001
AO4613_001 Datasheet
AO4613
| Part | Datasheet |
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AO4613_001 |
AO4613_001 (pdf) |
| Related Parts | Information |
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AO4613 |
AO4613 |
| PDF Datasheet Preview |
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| AO4613 30V Dual P + N-Channel MOSFET The AO4613 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Product Summary N-Channel VDS V = 30V ID = 7.2A VGS=10V RDS ON < VGS=10V < VGS=4.5V P-Channel -30V -6.1A VGS=10V RDS ON < VGS = -10V < VGS = -4.5V ESD Protected 100% UIS Tested 100% Rg Tested Top View SOIC-8 Bottom View Pin1 Top View S2 G2 S1 G1 G1 D1 p-channel n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Drain-Source Voltage Gate-Source Voltage ±20 Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B Power Dissipation TA=25°C TA=70°C Avalanche Current B Repetitive avalanche energy 0.1mH B 2 15 11 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Max p-channel -30 ±20 -30 2 20 -55 to 150 Units V W A mJ °C Thermal Characteristics n-channel and p-channel Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A |
| More datasheets: UP5-471-R | UP5-5R6-R | UP5-680-R | UP5-681-R | UP5-470-R | 8R37-N001 | 8R09-N001 | 8R25-N001 | 8R15-N001 | AO4613 |
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